The BLL6H1214L-250 is a single N-channel enhancement mode RF transistor in a SOT-502A package. It has a maximum drain source voltage of 100V and a maximum continuous drain current of 42A. The transistor operates over a temperature range of -65°C to 200°C and is suitable for pulsed RF applications. It has a typical power gain of 17 and an output power of 250mW.
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| Package/Case | SOT-502A |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 34.16(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.72(Max) |
| Package Material | Ceramic |
| Mounting | Screw |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Continuous Drain Current | 42A |
| Minimum Frequency | 1200MHz |
| Maximum Frequency | 1400MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Mode of Operation | Pulsed RF |
| Typical Power Gain | 17dB |
| Output Power | 250(Typ)W |
| EU RoHS | Yes |
| ECCN | EAR99 |
| RoHS Versions | 2011/65/EU, 2015/863 |
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