RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-Oxide Semiconductor FET,
Ampleon BLP0427M9S20G technical specifications.
| Max Operating Temperature | 225 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
