Ampleon
BLP10H603AZ
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, HVSON-12
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Technical Specifications
Ampleon BLP10H603AZ technical specifications.
General
Number of Terminals
12
Terminal Position
DUAL
JEDEC Package Code
MO-229
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
unknown
Military Spec
False
Datasheet
Ampleon BLP10H603AZ Datasheet
Download the complete datasheet for Ampleon BLP10H603AZ to view detailed technical specifications.
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