Ampleon
BLP10H603Z
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 5 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MO-229, 6 X 5 MM, 0.85 MM HEIGHT, ROHS COMPLIANT, THIN, PLASTIC, HVSON-12
Quick Jump:
Technical Specifications
Ampleon BLP10H603Z technical specifications.
General
| Number of Terminals | 12 |
| Terminal Position | DUAL |
| JEDEC Package Code | MO-229 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Ampleon BLP10H603Z Datasheet
Download the complete datasheet for Ampleon BLP10H603Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.