Analog Devices
ADL8107ACPZN
ADL8107ACPZN - Low Noise RF Amplifier, 6 GHz to 18 GHz, 24 dB Gain, 1.3 dB NF
The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. The amplifier provides a typical gain of 24 dB, a 1.3 dB typical noise figure, and an 18.5 dBm typical output power for 1 dB compression (OP1dB) at 7 GHz to 16 GHz. It requires 90 mA from a 5 V drain supply voltage and features inputs and outputs that are internally matched to 50 ohms. The device is suitable for military and test instrumentation applications.
Temp Range-40 to +85°C
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Technical Specifications
Analog Devices ADL8107ACPZN technical specifications.
General
| Frequency Range | 6 to 18GHz |
| Gain (7 GHz to 16 GHz) | 24dB |
| Noise Figure (7 GHz to 16 GHz) | 1.3dB |
| Output Third-Order Intercept (OIP3) | 29dBm |
| Output Power for 1 dB Compression (P1dB) | 18.5dBm |
| Supply Voltage (Typical) | 5V |
| Supply Current (Typical) | 90mA |
| Input/Output Impedance | 50Ohms |
| Technology | GaAs pHEMT MMIC |
| Operating Temperature Range | -40 to +85°C |
Compliance
| RoHS | RoHS3 Compliant |
| Moisture Sensitivity Level | MSL 1 |
Datasheet
Analog Devices ADL8107ACPZN Datasheet
Download the complete datasheet for Analog Devices ADL8107ACPZN to view detailed technical specifications.
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