The ADL8107 is a gallium arsenide (GaAs), monolithic microwave IC (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 6 GHz to 18 GHz. The amplifier provides a typical gain of 24 dB, a 1.3 dB typical noise figure, and an 18.5 dBm typical output power for 1 dB compression (OP1dB) at 7 GHz to 16 GHz. It requires 90 mA from a 5 V drain supply voltage and features inputs and outputs that are internally matched to 50 ohms. The device is suitable for military and test instrumentation applications.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Analog Devices ADL8107ACPZN datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Frequency Range | 6 to 18GHz |
| Gain (7 GHz to 16 GHz) | 24dB |
| Noise Figure (7 GHz to 16 GHz) | 1.3dB |
| Output Third-Order Intercept (OIP3) | 29dBm |
| Output Power for 1 dB Compression (P1dB) | 18.5dBm |
| Supply Voltage (Typical) | 5V |
| Supply Current (Typical) | 90mA |
| Input/Output Impedance | 50Ohms |
| Technology | GaAs pHEMT MMIC |
| Operating Temperature Range | -40 to +85°C |
| RoHS | RoHS3 Compliant |
| Moisture Sensitivity Level | MSL 1 |
Download the complete datasheet for Analog Devices ADL8107ACPZN to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
