Dual high-speed MOSFET gate driver drives two independent N-channel power MOSFETs with 4 A peak source and sink capability. The device operates from a 9.5 V to 18 V supply and accepts 3.3 V-compatible digital inputs. It provides UVLO with hysteresis, a precise shutdown comparator, an open-drain overtemperature warning flag, and overtemperature shutdown. Typical rise and fall times are 10 ns with a 2.2 nF load, and the driver is rated for −40°C to +85°C ambient operation in thermally enhanced 8-lead exposed-pad packages.
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| Driver type | Dual MOSFET gate driver |
| Channel input polarity | Noninverting A and B inputs |
| Supply voltage range | 9.5 to 18V |
| Peak source current | 4 typA |
| Peak sink current | -4 typA |
| Supply current, no switching | 1.2 typ, 3 maxmA |
| Input voltage high | 2.0 minV |
| Input voltage low | 0.8 maxV |
| Input current | -20 to +20µA |
| Rise time | 10 typ, 25 max at 2.2 nF loadns |
| Fall time | 10 typ, 25 max at 2.2 nF loadns |
| Rising propagation delay | 14 typ, 30 max at 2.2 nF loadns |
| Falling propagation delay | 22 typ, 35 max at 2.2 nF loadns |
| Delay matching between channels | 2 typns |
| UVLO turn-on threshold | 8.7 typV |
| UVLO turn-off threshold | 7.7 typV |
| Overtemperature warning threshold | 135 typ°C |
| Overtemperature shutdown threshold | 165 typ°C |
| Ambient temperature range | -40 to +85°C |
| Package options | 8-lead SOIC_N_EP RD-8-1; 8-lead MINI_SO_EP RH-8-1 |
| RoHS | Compliant for Z-suffix orderable parts |
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