Isolated SiC gate driver provides galvanic isolation for high performance silicon carbide switch drive applications. The device supports 30 A typical peak short-circuit drive output and 20 A typical peak drive current in a typical application. It operates from a 4.4 V to 7 V primary supply with secondary-side positive and negative supply capability for bipolar or unipolar gate drive. SPI communication provides slew-rate control, programmable operating modes, fault readback, and nonvolatile EEPROM register configurability. Protection functions include desaturation detection, active short-circuit operation, external Miller clamp drive, soft shutdown, overvoltage protection, undervoltage protection, and isolated temperature sensing.
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| Gate driver type | Isolated SiC gate driver |
| Peak short-circuit drive output | 30 typA |
| Peak drive current in typical application | 20 typA |
| Output power device resistance | <0.4ohm |
| Rated dielectric insulation voltage | 5000Vrms |
| Working voltage | 1500Vdc |
| Primary supply voltage VDD1 | 4.4 to 7V |
| Secondary positive supply voltage VDD2 to GND2 | 12 to 24V |
| Secondary negative supply voltage VSS2 to GND2 | -5.5 to -3.25V |
| Propagation delay | 140 typns |
| Minimum pulse width | 60ns |
| Static common-mode transient immunity | 150kV/us |
| Dynamic common-mode transient immunity | 150kV/us |
| DESAT rising threshold | 7.0 typV |
| ASC rising threshold | 8.0 typV |
| SPI clock frequency | 400 typ, 450 maxkHz |
| Operating junction temperature | -40 to 150°C |
| Creepage | 8.3mm |
| Clearance | 8.3mm |
| Package | 28-pin wide body SOIC |
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These are design resources that include the Analog Devices ADuM4177
User guide for the EVAL-ADuM4177EBZ evaluation board to test the ADuM4177 isolated gate driver with slew-rate control, SPI, and desaturation detection for SiC power devices.
