Dual high-side gate driver controls low-cost N-channel MOSFETs for high-side switching applications. The device operates from a 4.5 V to 18 V supply and uses an internal charge pump to drive MOSFET gates above the positive supply without external components. Micropower operation provides 8 µA standby current and 85 µA operating current per driver at 5 V, with TTL/CMOS-compatible inputs and on-chip overcurrent sensing using a 100 mV drain-sense threshold. It is offered in 8-pin PDIP and 8-pin SO package options.
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| Device function | Dual high-side micropower MOSFET driver |
| Number of drivers | 2 |
| Supply voltage | 4.5 to 18V |
| Absolute maximum supply voltage | 22V |
| Standby current | 8 typ, 20 maxµA |
| On current per driver at 5 V supply | 85 typ, 120 maxµA |
| On current per driver at 12 V supply | 180 typ, 400 maxµA |
| Input high voltage | 2.0 minV |
| Input low voltage | 0.8 maxV |
| Input current | ±1.0 maxµA |
| Input capacitance | 5 typpF |
| Drain sense threshold voltage | 100 typmV |
| Drain sense input current | ±0.1 typµA |
| Gate voltage above supply at 5 V supply | 6.8 typV |
| Turn-off time at 5 V supply, 1000 pF gate | 36 typ, 60 maxµs |
| Short-circuit turn-off time, 1000 pF gate | 16 typ, 30 maxµs |
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These are design resources that include the Analog Devices LTC1155
Design note for a notebook computer 5V regulator and 4-cell Ni-Cad charger using the LTC1155 dual MOSFET driver and LT1431 controller for high-side N-channel switching.