Monolithic dual NPN bipolar junction transistor offering a 450MHz bandwidth and 45V collector-emitter breakdown voltage. Features a maximum collector current of 25mA, 500mW power dissipation, and a 250mV collector-emitter saturation voltage. Operates across a -55°C to 125°C temperature range, housed in a TO-78 through-hole package.
Frequency450MHz
PackageTO-78
Current Rating30mA
MountingThrough Hole
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Technical Specifications
Analog Devices MAT01GH technical specifications.
General
Bandwidth
450MHz
Package/Case
TO-78
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
800mV
Current Rating
30mA
Frequency
450MHz
Height
4.7mm
Input Bias Current
18nA
Lead Free
Contains Lead
Length
9.4mm
Max Collector Current
25mA
Max Frequency
450MHz
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
2
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
No
Transition Frequency
450MHz
DC Rated Voltage
45V
Width
9.4mm
Compliance
RoHS
Not CompliantNo
Datasheet
Analog Devices MAT01GH Datasheet
Download the complete datasheet for Analog Devices MAT01GH to view detailed technical specifications.
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