Monolithic dual NPN bipolar junction transistor offering a 450MHz bandwidth and 45V collector-emitter breakdown voltage. Features a maximum collector current of 25mA, 500mW power dissipation, and a 250mV collector-emitter saturation voltage. Operates across a -55°C to 125°C temperature range, housed in a TO-78 through-hole package.
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Analog Devices MAT01GH technical specifications.
| Bandwidth | 450MHz |
| Package/Case | TO-78 |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 800mV |
| Current Rating | 30mA |
| Frequency | 450MHz |
| Height | 4.7mm |
| Input Bias Current | 18nA |
| Lead Free | Contains Lead |
| Length | 9.4mm |
| Max Collector Current | 25mA |
| Max Frequency | 450MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 2 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Transition Frequency | 450MHz |
| DC Rated Voltage | 45V |
| Width | 9.4mm |
| RoHS | Not CompliantNo |
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