NPN bipolar junction transistor featuring a matched monolithic dual element design. Offers a 450MHz gain bandwidth product and transition frequency, with a maximum collector current of 25mA. Collector-emitter breakdown voltage is 45V, and saturation voltage is 120mV. Packaged in a TO-78 through-hole mount, operating across a -55°C to 125°C temperature range.
Frequency450MHz
PackageTO-78
MountingThrough Hole
PolarityNPN
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Technical Specifications
Analog Devices MAT01GHZ technical specifications.
General
Package/Case
TO-78
Collector Base Voltage (VCBO)
45V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
120mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
800mV
Emitter Base Voltage (VEBO)
5V
Frequency
450MHz
Gain Bandwidth Product
450MHz
Height
4.7mm
hFE Min
250
Lead Free
Contains Lead
Length
9.4mm
Max Collector Current
25mA
Max Frequency
450MHz
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Through Hole
Number of Elements
2
Package Quantity
100
Packaging
Bulk
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
450MHz
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Analog Devices MAT01GHZ Datasheet
Download the complete datasheet for Analog Devices MAT01GHZ to view detailed technical specifications.
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