NPN bipolar junction transistor featuring a matched monolithic dual element design. Offers a 450MHz gain bandwidth product and transition frequency, with a maximum collector current of 25mA. Collector-emitter breakdown voltage is 45V, and saturation voltage is 120mV. Packaged in a TO-78 through-hole mount, operating across a -55°C to 125°C temperature range.
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Analog Devices MAT01GHZ technical specifications.
| Package/Case | TO-78 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 120mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 800mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 450MHz |
| Gain Bandwidth Product | 450MHz |
| Height | 4.7mm |
| hFE Min | 250 |
| Lead Free | Contains Lead |
| Length | 9.4mm |
| Max Collector Current | 25mA |
| Max Frequency | 450MHz |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 2 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 450MHz |
| Width | 9.4mm |
| RoHS | Compliant |
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