ANALOG DEVICES

MAT03FHZ

Datasheet

PNP BJT Transistor, 190MHz, 36V, 20mA, TO-78-6

Analog Devices

MAT03FHZ

Name: MAT03FHZ Analog Devices
Brand: Analog Devices
SKU: MAT03FHZ

PNP BJT Transistor, 190MHz, 36V, 20mA, TO-78-6

Low noise, matched dual PNP bipolar junction transistor (BJT) in a TO-78-6 through-hole package. Features a collector-emitter voltage of 100mV max, collector base voltage of 36V, and emitter base voltage of 36V. Offers a minimum hFE of 40 and a gain bandwidth product of 190MHz. Maximum collector current is 20mA with a power dissipation of 500mW. Operates across a temperature range of -40°C to 125°C.

PackageTO-78-6

MountingThrough Hole

PolarityPNP

Power500mW

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Technical Specifications

Analog Devices MAT03FHZ technical specifications.

General

Package/Case	TO-78-6
Collector Base Voltage (VCBO)	36V
Collector Emitter Breakdown Voltage	36V
Collector Emitter Saturation Voltage	25mV
Collector-emitter Voltage-Max	100mV
Emitter Base Voltage (VEBO)	36V
Gain Bandwidth Product	190MHz
Height	4.7mm
hFE Min	40
Lead Free	Contains Lead
Length	9.4mm
Max Collector Current	20mA
Max Operating Temperature	125°C
Min Operating Temperature	-40°C
Max Power Dissipation	500mW
Mount	Through Hole
Package Quantity	100
Packaging	Rail/Tube
Polarity	PNP
Power Dissipation	500mW
Radiation Hardening	No
RoHS Compliant	Yes
Transition Frequency	190MHz
Width	9.4mm