Low noise, matched dual PNP bipolar junction transistor (BJT) in a TO-78-6 through-hole package. Features a collector-emitter voltage of 100mV max, collector base voltage of 36V, and emitter base voltage of 36V. Offers a minimum hFE of 40 and a gain bandwidth product of 190MHz. Maximum collector current is 20mA with a power dissipation of 500mW. Operates across a temperature range of -40°C to 125°C.
Sign in to ask questions about the Analog Devices MAT03FHZ datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Analog Devices MAT03FHZ technical specifications.
| Package/Case | TO-78-6 |
| Collector Base Voltage (VCBO) | 36V |
| Collector Emitter Breakdown Voltage | 36V |
| Collector Emitter Saturation Voltage | 25mV |
| Collector-emitter Voltage-Max | 100mV |
| Emitter Base Voltage (VEBO) | 36V |
| Gain Bandwidth Product | 190MHz |
| Height | 4.7mm |
| hFE Min | 40 |
| Lead Free | Contains Lead |
| Length | 9.4mm |
| Max Collector Current | 20mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 190MHz |
| Width | 9.4mm |
| RoHS | Compliant |
Download the complete datasheet for Analog Devices MAT03FHZ to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
