Low noise, matched dual PNP bipolar junction transistor (BJT) in a TO-78-6 through-hole package. Features a collector-emitter voltage of 100mV max, collector base voltage of 36V, and emitter base voltage of 36V. Offers a minimum hFE of 40 and a gain bandwidth product of 190MHz. Maximum collector current is 20mA with a power dissipation of 500mW. Operates across a temperature range of -40°C to 125°C.
PackageTO-78-6
MountingThrough Hole
PolarityPNP
Power500mW
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Technical Specifications
Analog Devices MAT03FHZ technical specifications.
General
Package/Case
TO-78-6
Collector Base Voltage (VCBO)
36V
Collector Emitter Breakdown Voltage
36V
Collector Emitter Saturation Voltage
25mV
Collector-emitter Voltage-Max
100mV
Emitter Base Voltage (VEBO)
36V
Gain Bandwidth Product
190MHz
Height
4.7mm
hFE Min
40
Lead Free
Contains Lead
Length
9.4mm
Max Collector Current
20mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Power Dissipation
500mW
Mount
Through Hole
Package Quantity
100
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
190MHz
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Analog Devices MAT03FHZ Datasheet
Download the complete datasheet for Analog Devices MAT03FHZ to view detailed technical specifications.
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