
Quad NPN Bipolar Junction Transistor (BJT) for surface mount applications in an SOIC package. Features a collector-emitter voltage (VCEO) of 40V, a collector-emitter saturation voltage of 60mV, and a maximum collector current of 30mA. Operates with a transition frequency of 300MHz and a frequency response up to 1kHz. Designed for a temperature range of -40°C to 85°C.
Analog Devices MAT14ARZ technical specifications.
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