The BD648-S is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It is packaged in a TO-220 case and is designed for through-hole mounting. The transistor has a maximum operating temperature range of -65°C to 150°C and a maximum power dissipation of 2W. It is not radiation hardened and is available in quantities of 15000 per reel.
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| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 2.5V |
| Current | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Max Collector Current | 500uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 15000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Voltage | 80V |
| RoHS | Compliant |
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