
Bidirectional transient voltage suppressor diode, 500W peak pulse power, 8V working voltage, and 8.5V minimum breakdown voltage. Features 4 bidirectional channels, 16.9V clamping voltage, and 10µA leakage current. This silicon device is housed in a RoHS compliant SOIC package for surface mounting, with a capacitance of 500pF and a maximum surge current of 34A. Operates across a temperature range of -55°C to 150°C.
Bourns CDNBS08-T08C technical specifications.
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