The SILICON Bidirectional Transient Voltage Suppressor Diode is a 2-terminal device with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It has a nominal breakdown voltage of 16.4V and a maximum breakdown voltage of 17.2V. The device can withstand a maximum non-repetitive peak reverse power dissipation of 600W and a maximum clamping voltage of 23.2V. It is packaged in a DO-214AA package type.
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| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | DUAL |
| JEDEC Package Code | DO-214AA |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 14 |
| Breakdown Voltage-Min | 15.6 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 23.2 |
| Breakdown Voltage-Nom | 16.4 |
| Breakdown Voltage-Max | 17.2 |
| Power Dissipation-Max | 5 |
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
