NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 12V collector-emitter voltage (VCEO) and a maximum continuous collector current of 60mA. Operates with a gain bandwidth product of 8GHz and a minimum hFE of 30. Housed in a 4-pin Micro-X SMD/SMT package, this RoHS compliant component offers a wide operating temperature range from -60°C to 150°C.
Frequency8GHz
PackageSMD/SMT
MountingSurface Mount
PolarityNPN
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Technical Specifications
Broadcom AT-41535G technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 60mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 18dB |
| Gain Bandwidth Product | 8GHz |
| hFE Min | 30 |
| Max Collector Current | 60mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -60°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
Compliance
| RoHS | Compliant |
Datasheet
Broadcom AT-41535G Datasheet
Download the complete datasheet for Broadcom AT-41535G to view detailed technical specifications.
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