NPN RF small signal bipolar transistor, designed for C-band operation with a maximum frequency of 9GHz. Features a 12V collector-emitter breakdown voltage and 80mA continuous collector current. This silicon transistor operates across a wide temperature range of -65°C to 200°C, with a maximum power dissipation of 600mW. Packaged as a surface-mount chip, it offers a gain of 14dB and is RoHS compliant.
Frequency9GHz
PackageCHIP
MountingSurface Mount
PolarityNPN
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Technical Specifications
Broadcom AT-42000-GP4 technical specifications.
General
| Package/Case | CHIP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 80mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 9GHz |
| Gain | 14dB |
| Gain Bandwidth Product | 9GHz |
| Lead Free | Lead Free |
| Max Collector Current | 80mA |
| Max Frequency | 9GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 9GHz |
Compliance
| RoHS | Compliant |
Datasheet
Broadcom AT-42000-GP4 Datasheet
Download the complete datasheet for Broadcom AT-42000-GP4 to view detailed technical specifications.
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