NPN RF small signal bipolar transistor for C-band applications. Features 80mA continuous collector current and 12V collector-emitter breakdown voltage. Operates up to 8GHz with a gain of 13.5dB. Housed in a hermetically sealed ceramic microstrip package with gold contact plating, suitable for surface mount technology. Extended operating temperature range from -65°C to 200°C.
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Broadcom AT-42010 technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 12V |
| Contact Plating | Gold |
| Continuous Collector Current | 80mA |
| Current Rating | 80mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 13.5dB |
| Gain Bandwidth Product | 8GHz |
| Lead Free | Lead Free |
| Max Collector Current | 80mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 600mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 600mW |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
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