N-Channel RF Small Signal Field-Effect Transistor for L-Band applications. Features High Electron Mobility FET technology with a 2 GHz operating frequency and 18dB gain. Offers a low noise figure of 0.4dB and a maximum drain current of 80mA. Housed in a 4-pin SC-70 (SOT-343) surface mount package with tin-matte contact plating. Lead-free and RoHS compliant, operating from -65°C to 160°C.
Frequency2GHz
PackageSOT-343
Current15mA
Voltage Rating5.5V
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Technical Specifications
Broadcom ATF-35143-BLKG technical specifications.
General
Package/Case
SOT-343
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
80mA
Drain to Source Voltage (Vdss)
5.5V
FET Technology
HIGH ELECTRON MOBILITY
Frequency
2GHz
Gain
18dB
Gate to Source Voltage (Vgs)
-5V
Height
1mm
Highest Frequency Band
X BAND
Lead Free
Lead Free
Length
2.25mm
Max Operating Temperature
160°C
Min Operating Temperature
-65°C
Max Power Dissipation
300mW
Mount
Surface Mount
Noise Figure
0.4dB
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bag
Polarity
N-CHANNEL
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
15mA
Technology
GAAS
Test Voltage
2V
Voltage Rating
5.5V
DC Rated Voltage
5.5V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-35143-BLKG Datasheet
Download the complete datasheet for Broadcom ATF-35143-BLKG to view detailed technical specifications.
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