X-band RF small signal field-effect transistor featuring Gallium Arsenide (GaAs) technology and N-channel polarity. This high electron mobility FET offers a 12dB gain and a low 0.5dB noise figure, operating up to 12 GHz. Designed for surface mount applications, it utilizes a microstrip package with gold contact plating and supports a continuous drain current of 45mA with a drain-to-source voltage of 3V. The device operates across a wide temperature range from -65°C to 150°C and is RoHS compliant.
Frequency12GHz
PackageSMD/SMT
Voltage Rating3V
MountingSurface Mount
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Technical Specifications
Broadcom ATF-36077-STR technical specifications.
General
Package/Case
SMD/SMT
Contact Plating
Gold
Continuous Drain Current (ID)
45mA
Drain to Source Voltage (Vdss)
3V
Frequency
12GHz
Gain
12dB
Gate to Source Voltage (Vgs)
-3V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
180mW
Mount
Surface Mount
Noise Figure
0.5dB
Nominal Supply Current
10mA
Operating Frequency
12 GHz
Package Quantity
100
Packaging
Bulk
Polarity
N-CHANNEL
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Technology
GAAS
Test Voltage
1.5V
Voltage Rating
3V
DC Rated Voltage
3V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-36077-STR Datasheet
Download the complete datasheet for Broadcom ATF-36077-STR to view detailed technical specifications.
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