
Surface mount RF small signal field-effect transistor, N-channel, Gallium Arsenide (GaAs) technology. Features a 1-element design operating in the X-band with a 2 GHz frequency. Delivers 16dB gain, 0.4dB noise figure, and 12dBm P1dB. Maximum drain current is 145mA with a drain-to-source voltage of 4.5V. Packaged in a 4-pin SC-70 (SOT-343) with matte tin contact plating, this lead-free and RoHS compliant component operates from -65°C to 160°C.
Broadcom ATF-38143-BLKG technical specifications.
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