RF Small Signal Field-Effect Transistor, C Band, Silicon, N-Channel, High Electron Mobility FET. Features 2 GHz operating frequency with 15.5dB gain and a 1.1dB noise figure. Supports up to 1A continuous drain current and 7V drain-to-source voltage. Surface mount SOT-89 package with tin, matte contact plating. Operates from -65°C to 150°C with 2.25W power dissipation.
Frequency2GHz
PackageSOT-89
Current280mA
MountingSurface Mount
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Technical Specifications
Broadcom ATF-50189-BLK technical specifications.
General
Package/Case
SOT-89
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
1A
Drain to Source Voltage (Vdss)
7V
Dual Supply Voltage
4.5V
FET Technology
HIGH ELECTRON MOBILITY
Frequency
2GHz
Gain
15.5dB
Gate to Source Voltage (Vgs)
800mV
Height
1.6mm
Highest Frequency Band
C BAND
Lead Free
Lead Free
Length
4.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2.25W
Mount
Surface Mount
Noise Figure
1.1dB
Nominal Vgs
380mV
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bag
Power Dissipation
2.25W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Supply Current
280mA
Technology
GAAS
Termination
SMD/SMT
Test Voltage
4.5V
DC Rated Voltage
4.5V
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-50189-BLK Datasheet
Download the complete datasheet for Broadcom ATF-50189-BLK to view detailed technical specifications.
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