Broadcom
ATF-501P8-TR1
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
Frequency2GHz
Voltage Rating7V
MountingSurface Mount
Power3.5W
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Technical Specifications
Broadcom ATF-501P8-TR1 technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
1A
Drain to Source Voltage (Vdss)
7V
Frequency
2GHz
Gain
15dB
Gate to Source Voltage (Vgs)
800mV
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
3.5W
Mount
Surface Mount
Noise Figure
1dB
Operating Frequency
2 GHz
Package Quantity
3000
Packaging
Tape and Reel
Power Dissipation
3.5W
RoHS Compliant
Yes
Technology
GAAS
Test Voltage
4.5V
Voltage Rating
7V
DC Rated Voltage
4.5V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-501P8-TR1 Datasheet
Download the complete datasheet for Broadcom ATF-501P8-TR1 to view detailed technical specifications.
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