RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
Sign in to ask questions about the Broadcom ATF-521P8-TR2 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Broadcom ATF-521P8-TR2 technical specifications.
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 7V |
| Frequency | 2GHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 1V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Noise Figure | 1.5dB |
| Operating Frequency | 2 GHz |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.5W |
| RoHS Compliant | Yes |
| Technology | GAAS |
| Test Voltage | 4.5V |
| Voltage Rating | 7V |
| DC Rated Voltage | 4.5V |
| RoHS | Compliant |
Download the complete datasheet for Broadcom ATF-521P8-TR2 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
