Broadcom
ATF-531P8-TR1
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8
Frequency2GHz
Voltage Rating7V
MountingSurface Mount
Power1W
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Technical Specifications
Broadcom ATF-531P8-TR1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Voltage (Vdss) | 7V |
| Frequency | 2GHz |
| Gain | 20dB |
| Gate to Source Voltage (Vgs) | 1V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Noise Figure | 0.6dB |
| Operating Frequency | 2 GHz |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | GAAS |
| Test Voltage | 4V |
| Voltage Rating | 7V |
| DC Rated Voltage | 4V |
Compliance
| RoHS | Compliant |
Datasheet
Broadcom ATF-531P8-TR1 Datasheet
Download the complete datasheet for Broadcom ATF-531P8-TR1 to view detailed technical specifications.
No datasheet is available for this part.
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