RF Small Signal Field-Effect Transistor, N-Channel, Silicon, High Electron Mobility FET. Features 2 GHz operating frequency, 17.5 dB gain, and 0.5 dB noise figure. Continuous drain current is 120mA with a drain to source breakdown voltage of 5V. Packaged in a 0505 surface mount case, this lead-free component operates from -65°C to 150°C.
Frequency2GHz
Package0505
Voltage Rating5V
Current Rating60A
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Technical Specifications
Broadcom ATF-541M4-TR1 technical specifications.
General
Case Code (Imperial)
0505
Case Code (Metric)
1412
Package/Case
0505
Continuous Drain Current (ID)
120mA
Current Rating
60A
Drain to Source Breakdown Voltage
5V
Drain to Source Voltage (Vdss)
5V
Frequency
2GHz
Gain
17.5dB
Gate to Source Voltage (Vgs)
1V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
360mW
Mount
Surface Mount
Noise Figure
0.5dB
Operating Frequency
2 GHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
360mW
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Technology
GAAS
Test Voltage
3V
Voltage Rating
5V
DC Rated Voltage
3V
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-541M4-TR1 Datasheet
Download the complete datasheet for Broadcom ATF-541M4-TR1 to view detailed technical specifications.
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