Surface mount RF small signal field-effect transistor, N-channel, 1-element, C Band, silicon, High Electron Mobility FET technology. Features low noise amplifier type with a noise figure of 0.6dB and gain of 17.7dB at 2GHz. Operates across a frequency range up to 6GHz, with a drain to source voltage of 5V and continuous drain current of 100mA. Packaged in a 4-pin SC-70 (SOT-343) plastic package, this lead-free and RoHS compliant component offers a wide operating temperature range from -65°C to 150°C.
Frequency2GHz
PackageSOT-343
Current10mA
Voltage Rating5V
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Technical Specifications
Broadcom ATF-55143-BLKG technical specifications.
General
Amplifier Type
LOW NOISE
Package/Case
SOT-343
Continuous Drain Current (ID)
100mA
Drain to Source Voltage (Vdss)
5V
FET Technology
HIGH ELECTRON MOBILITY
Frequency
2GHz
Gain
17.7dB
Gate to Source Voltage (Vgs)
1V
Height
1mm
Highest Frequency Band
C BAND
Lead Free
Lead Free
Length
2.25mm
Max Frequency
6GHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
270mW
Mount
Surface Mount
Noise Figure
0.6dB
Operating Frequency
2 GHz
Package Quantity
100
Packaging
Bag
Polarity
N-CHANNEL
Power Dissipation
270mW
Power Supply
5V
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
10mA
Technology
GAAS
Test Voltage
2.7V
Voltage Rating
5V
DC Rated Voltage
2.7V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-55143-BLKG Datasheet
Download the complete datasheet for Broadcom ATF-55143-BLKG to view detailed technical specifications.
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