High-performance RF small signal field-effect transistor, 1-element, N-channel, High Electron Mobility FET technology. Features a 2 GHz operating frequency, 16.5dB gain, and a low 0.5dB noise figure. Operates with a 5V drain-to-source voltage and 30mA supply current. Packaged in a compact SC-70 (SOT-343) surface mount plastic package with tin, matte contact plating. Rated for continuous drain current up to 100mA and a maximum power dissipation of 500mW.
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Broadcom ATF-58143-BLKG technical specifications.
| Package/Case | SOT-343 |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 5V |
| Frequency | 2GHz |
| Gain | 16.5dB |
| Gate to Source Voltage (Vgs) | 1V |
| Height | 1mm |
| Length | 2.25mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Noise Figure | 0.5dB |
| Operating Frequency | 2 GHz |
| Operating Supply Voltage | 3V |
| P1dB | 19dBm |
| Package Quantity | 100 |
| Packaging | Bag |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Supply Current | 30mA |
| Technology | GAAS |
| Test Voltage | 3V |
| Voltage Rating | 5V |
| Width | 1.35mm |
| RoHS | Compliant |
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