High-performance RF small signal field-effect transistor, 1-element, N-channel, High Electron Mobility FET technology. Features a 2 GHz operating frequency, 16.5dB gain, and a low 0.5dB noise figure. Operates with a 5V drain-to-source voltage and 30mA supply current. Packaged in a compact SC-70 (SOT-343) surface mount plastic package with tin, matte contact plating. Rated for continuous drain current up to 100mA and a maximum power dissipation of 500mW.
Frequency2GHz
PackageSOT-343
Current30mA
Voltage Rating5V
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Technical Specifications
Broadcom ATF-58143-BLKG technical specifications.
General
Package/Case
SOT-343
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
100mA
Drain to Source Voltage (Vdss)
5V
Frequency
2GHz
Gain
16.5dB
Gate to Source Voltage (Vgs)
1V
Height
1mm
Length
2.25mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Noise Figure
0.5dB
Operating Frequency
2 GHz
Operating Supply Voltage
3V
P1dB
19dBm
Package Quantity
100
Packaging
Bag
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Supply Current
30mA
Technology
GAAS
Test Voltage
3V
Voltage Rating
5V
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Broadcom ATF-58143-BLKG Datasheet
Download the complete datasheet for Broadcom ATF-58143-BLKG to view detailed technical specifications.
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