BROADCOM

VMMK-1218-TR1G

Datasheet

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

Broadcom

VMMK-1218-TR1G

Name: VMMK-1218-TR1G Broadcom
Brand: Broadcom
SKU: VMMK-1218-TR1G

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

Frequency10GHz

Package0402

Voltage Rating5V

MountingSurface Mount

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Technical Specifications

Broadcom VMMK-1218-TR1G technical specifications.

General

Package/Case	0402
Continuous Drain Current (ID)	100mA
Drain to Source Voltage (Vdss)	5V
Frequency	10GHz
Gain	9dB
Gate to Source Voltage (Vgs)	1V
Lead Free	Lead Free
Max Operating Temperature	150°C
Max Power Dissipation	300mW
Mount	Surface Mount
Noise Figure	0.81dB
Operating Frequency	10 GHz
Package Quantity	5000
Packaging	Tape and Reel
Radiation Hardening	No
RoHS Compliant	Yes
Technology	GAAS
Test Voltage	3V
Voltage Rating	5V