VMMK-1218-TR1G

Datasheet

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

Broadcom

VMMK-1218-TR1G

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

Frequency10GHz

Package0402

Voltage Rating5V

MountingSurface Mount

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Technical Specifications

Broadcom VMMK-1218-TR1G technical specifications.

General

Package/Case

0402

Continuous Drain Current (ID)

100mA

Drain to Source Voltage (Vdss)

Frequency

10GHz

Gain

9dB

Gate to Source Voltage (Vgs)

Lead Free

Max Operating Temperature

150°C

Max Power Dissipation

300mW

Mount

Surface Mount

Noise Figure

0.81dB

Operating Frequency

10 GHz

Package Quantity

5000

Packaging

Tape and Reel

Radiation Hardening

RoHS Compliant

Yes

Technology

GAAS

Test Voltage

Voltage Rating

Compliance

RoHS

Compliant

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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Product Images

VMMK-1218-TR1G

VMMK-1218-TR1G

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 1 X 0.50 MM, 0.25 MM HEIGHT, ROHS COMPLIANT, LEADLESS, ULTRA THIN, MINIATURE PACKAGE-3

Technical Specifications

General

Compliance

Datasheet

Broadcom VMMK-1218-TR1G Datasheet

Product Images