
RF Small Signal Field-Effect Transistor, L-Band, Gallium Arsenide (GaAs) technology, N-Channel, High Electron Mobility FET. Features low noise amplifier type with a 1dB noise figure and 11dB gain at 12GHz operating frequency. Designed for surface mount applications with a subminiature, leadless package (0402 case code) measuring 1.09mm length, 0.585mm width, and 0.25mm height. Supports up to 5V drain-to-source voltage and 50mA continuous drain current, with a maximum operating frequency of 26GHz and 250mW power dissipation. RoHS compliant.
Broadcom VMMK-1225-BLKG technical specifications.
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