California Eastern Laboratories
NE3210S01-T1B
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, PLASTIC, SO1, 4 PIN
PackageSO
MountingSurface Mount
Power165mW
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Technical Specifications
California Eastern Laboratories NE3210S01-T1B technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 70mA |
| Drain to Source Breakdown Voltage | 4V |
| Gate to Source Voltage (Vgs) | 3V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Power Dissipation | 165mW |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
California Eastern Laboratories NE3210S01-T1B Datasheet
Download the complete datasheet for California Eastern Laboratories NE3210S01-T1B to view detailed technical specifications.
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