RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Hetero-junction FET
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| Continuous Drain Current (ID) | 90mA |
| Gate to Source Voltage (Vgs) | 3V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| RoHS Compliant | No |
| RoHS | Not Compliant |
