RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
California Eastern Laboratories NE5520379A-T1 technical specifications.
| Number of Terminals | 4 |
| Terminal Position | QUAD |
| Number of Elements | 1 |
| REACH | unknown |
| Military Spec | False |
No datasheet is available for this part.
