California Eastern Laboratories
NE8500200
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
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Technical Specifications
California Eastern Laboratories NE8500200 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 6 |
| Terminal Position | UPPER |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.40 |
| REACH | unknown |
| Military Spec | False |
Datasheet
California Eastern Laboratories NE8500200 Datasheet
Download the complete datasheet for California Eastern Laboratories NE8500200 to view detailed technical specifications.
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