The CEL NE3210S01-T1B is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 4V and a continuous drain current of 70mA. It operates at a maximum frequency of 12GHz and has a maximum power dissipation of 165mW. The device is packaged in a surface mount package and is lead free. It is rated for operation up to 125°C and has a noise figure of 0.35dB.
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| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 70mA |
| Drain to Source Breakdown Voltage | 4V |
| Drain to Source Voltage (Vdss) | 4V |
| Frequency | 12GHz |
| Gain | 13.5dB |
| Gate to Source Voltage (Vgs) | -3V |
| Lead Free | Lead Free |
| Max Operating Temperature | 125°C |
| Max Power Dissipation | 165mW |
| Noise Figure | 0.35dB |
| Operating Frequency | 12 GHz |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 165mW |
| Technology | GAAS |
| Test Voltage | 2V |
| Voltage Rating | 4V |
| RoHS | Compliant |
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