Transistor NPN 2GHZ M16
CEL NE662M16-A technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 3.3V |
| Collector-emitter Voltage-Max | 3.3V |
| Continuous Collector Current | 35mA |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 25GHz |
| Gain | 20dB |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Max Collector Current | 35mA |
| Max Frequency | 25GHz |
| Max Power Dissipation | 115mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 115mW |
| Transition Frequency | 25GHz |
| RoHS | Compliant |
No datasheet is available for this part.
