The CEL NE68530-T1-A is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 6V and a maximum collector current of 30mA. It has a maximum power dissipation of 150mW and is packaged in the SOT-323 package. The transistor is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageSOT-323
MountingSurface Mount
PolarityNPN
Power150mW
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Technical Specifications
CEL NE68530-T1-A technical specifications.
General
| Package/Case | SOT-323 |
| Collector Emitter Breakdown Voltage | 6V |
| Gain | 7dB |
| Max Breakdown Voltage | 6V |
| Max Collector Current | 30mA |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Transition Frequency | 12GHz |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE68530-T1-A Datasheet
Download the complete datasheet for CEL NE68530-T1-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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