The CEL NE851M13-T3-A is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 5.5V and a continuous collector current of 100mA. It has a maximum power dissipation of 140mW and a transition frequency of 4.5GHz. This transistor is lead free and available in a package quantity of 10,000 units, packaged in tape and reel. It is suitable for use in a variety of applications where a high gain of 5.5dB is required.
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| Package/Case | M |
| Collector Emitter Breakdown Voltage | 5.5V |
| Continuous Collector Current | 100mA |
| Gain | 5.5dB |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5.5V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 140mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 140mW |
| Transition Frequency | 4.5GHz |
| RoHS | Compliant |
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