The CEL NE851M13-T3-A is a surface mount NPN bipolar junction transistor with a collector emitter breakdown voltage of 5.5V and a continuous collector current of 100mA. It has a maximum power dissipation of 140mW and a transition frequency of 4.5GHz. This transistor is lead free and available in a package quantity of 10,000 units, packaged in tape and reel. It is suitable for use in a variety of applications where a high gain of 5.5dB is required.
PackageM
MountingSurface Mount
PolarityNPN
Power140mW
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Technical Specifications
CEL NE851M13-T3-A technical specifications.
General
| Package/Case | M |
| Collector Emitter Breakdown Voltage | 5.5V |
| Continuous Collector Current | 100mA |
| Gain | 5.5dB |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 5.5V |
| Max Collector Current | 100mA |
| Max Power Dissipation | 140mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 140mW |
| Transition Frequency | 4.5GHz |
Compliance
| RoHS | Compliant |
Datasheet
CEL NE851M13-T3-A Datasheet
Download the complete datasheet for CEL NE851M13-T3-A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.