
The UPA801T-A is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It has a maximum power dissipation of 200mW and a transition frequency of 4.5GHz. The transistor is packaged in a SOT-363 package and is available in bulk packaging. It operates over a temperature range of -40°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the CEL UPA801T-A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
CEL UPA801T-A technical specifications.
| Package/Case | SOT-363 |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 12V |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 3V |
| hFE Min | 70 |
| Max Collector Current | 100mA |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Packaging | Bulk |
| Polarity | NPN |
| Transition Frequency | 4.5GHz |
| RoHS | Compliant |
Download the complete datasheet for CEL UPA801T-A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.