The 1N2160 is a silicon rectifier diode with a maximum reverse voltage of 600V and a maximum operating temperature of 200 degrees Celsius. It has a single terminal and is packaged in a DO-5 package. The diode element is made of silicon and has a maximum operating temperature range of -65 to 200 degrees Celsius.
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Central Semiconductor 1N2160 technical specifications.
| Max Operating Temperature | 200 |
| Number of Terminals | 1 |
| Min Operating Temperature | -65 |
| Terminal Position | UPPER |
| JEDEC Package Code | DO-5 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
| RoHS | No |
| Lead Free | No |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
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