Central Semiconductor
1N5622 TR
General Purpose Rectifier Diode Single 1000V 1A 40A 1.2V 2000ns -65 to 200°C Through Hole
The 1N5622 TR is a general purpose rectifier diode with a peak reverse repetitive voltage rating of 1000V and a maximum continuous forward current of 1A at a junction temperature of 55°C. It has a peak non-repetitive surge current of 40A and a peak forward voltage of 1.2V. The diode has a peak reverse recovery time of 2000ns and operates over a temperature range of -65 to 200°C. It is available in a through hole package.
PackageGPR-1A
MountingThrough Hole
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Technical Specifications
Central Semiconductor 1N5622 TR technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | GPR-1A |
| Package/Case | GPR-1A |
| Lead Shape | Through Hole |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 6.1(Max) |
| Package Diameter (mm) | 3.81(Max) |
| Package Weight (g) | 0.342 |
| Mounting | Through Hole |
| Type | Switching Diode |
| Configuration | Single |
| Peak Reverse Repetitive Voltage | 1000V |
| Maximum Continuous Forward Current | 1@Ta=55CA |
| Peak Non-Repetitive Surge Current | 40A |
| Peak Forward Voltage | 1.2V |
| Peak Reverse Current | 0.5uA |
| Peak Reverse Recovery Time | 2000ns |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Operating Junction Temperature | -65 to 200°C |
Compliance
| Cage Code | 55464 |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Central Semiconductor 1N5622 TR Datasheet
Download the complete datasheet for Central Semiconductor 1N5622 TR to view detailed technical specifications.
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