NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 60V collector-emitter voltage and 3A continuous collector current. Housed in a TO-66 metal package with three through-hole leads and a tab, offering 35W power dissipation. Silicon material ensures reliable performance with a minimum DC current gain of 25 at 1.5A. Maximum transition frequency is 4MHz.
PackageTO-66
MountingThrough Hole
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Technical Specifications
Central Semiconductor 2N4232 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-213-AA
Package/Case
TO-66
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
24.43(Max) + 7.36
Package Width (mm)
17.78
Package Height (mm)
8.64(Max)
Seated Plane Height (mm)
8.64(Max)
Pin Pitch (mm)
5.33(Max)
Package Weight (g)
5.84
Package Material
Metal
Mounting
Through Hole
Jedec
TO-213AA
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
70V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
35000mW
Material
Si
Minimum DC Current Gain
Maximum Transition Frequency
4(Min)MHz
Category
Bipolar Power
Compliance
Cage Code
55464
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Central Semiconductor 2N4232 Datasheet
Download the complete datasheet for Central Semiconductor 2N4232 to view detailed technical specifications.
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