NPN bipolar junction transistor featuring a 40V collector-emitter voltage and 1A continuous collector current. This single-element silicon transistor is housed in a TO-66 metal package with a through-hole mounting style. Key specifications include a maximum power dissipation of 25000mW and a minimum DC current gain of 20 at 0.5A. The 3-pin configuration includes a tab for enhanced thermal management.
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| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 24.43(Max) + 7.36 |
| Package Width (mm) | 17.78 |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Pin Pitch (mm) | 5.33(Max) |
| Package Weight (g) | 5.84 |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Collector-Emitter Voltage | 40V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 25000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected] |
| Maximum Transition Frequency | 3(Min)MHz |
| Category | Bipolar Power |
| Cage Code | 55464 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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