This silicon NPN transistor is designed for high-voltage amplifier applications. It is rated for 160 V collector-emitter voltage, 180 V collector-base voltage, and 600 mA continuous collector current, with 625 mW power dissipation at 25°C ambient and 1.0 W at 25°C case temperature. The device is supplied in a TO-92 through-hole package with lead code 1 emitter, 2 base, and 3 collector. It operates over a -65°C to +150°C junction and storage temperature range and provides transition frequency up to 300 MHz with low capacitance characteristics.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | TO-92 |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.21.00.95 |
| REACH | not_compliant |
| Military Spec | False |
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