NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector-emitter voltage of 120V and a continuous collector current of 4A. Dissipates up to 40W, with a minimum DC current gain of 15 at 1.5A. This single-element transistor is housed in a TO-66 (TO-213AA) metal package with a through-hole mounting style and three pins.
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Central Semiconductor 2N6466 technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-213-AA |
| Package/Case | TO-66 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 24.43(Max) + 7.36 |
| Package Width (mm) | 17.78 |
| Package Height (mm) | 8.64(Max) |
| Seated Plane Height (mm) | 8.64(Max) |
| Pin Pitch (mm) | 5.33(Max) |
| Package Weight (g) | 5.84 |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-213AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 130V |
| Maximum Collector-Emitter Voltage | 120V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 40000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected] |
| Maximum Transition Frequency | 5(Min)MHz |
| Category | Bipolar Power |
| Cage Code | 55464 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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