NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 65V collector-emitter voltage, 0.2A maximum collector current, and 250mW power dissipation. This single-element transistor is housed in a compact SOT-523 package with 3 pins and a 0.5mm pin pitch. Operating temperature range is -65°C to 150°C, with a minimum DC current gain of 200.
PackageSOT-523
MountingSurface Mount
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Technical Specifications
Central Semiconductor BC846BT TR technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-523
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
3
PCB
3
Package Length (mm)
1.7(Max)
Package Width (mm)
0.98(Max)
Package Height (mm)
0.78(Max)
Seated Plane Height (mm)
0.78(Max)
Pin Pitch (mm)
0.5
Package Weight (g)
0.0026
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
65V
Maximum DC Collector Current
0.2A
Maximum Power Dissipation
250mW
Material
Si
Minimum DC Current Gain
200@2mA@5V
Maximum Transition Frequency
100(Min)MHz
Category
Bipolar Small Signal
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
55464
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Central Semiconductor BC846BT TR Datasheet
Download the complete datasheet for Central Semiconductor BC846BT TR to view detailed technical specifications.
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