N-channel enhancement mode silicon MOSFET, designed for surface mount applications. Features a 30V drain-source voltage and 1.78A continuous drain current. Housed in a compact 3-pin SOT-883L package with no leads, measuring 1.05mm x 0.65mm x 0.35mm. Offers a low drain-source on-resistance of 460mOhm at 4.5V gate-source voltage. Operating temperature range from -65°C to 150°C.
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| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-883L |
| Lead Shape | No Lead |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 1.05(Max) |
| Package Width (mm) | 0.65(Max) |
| Package Height (mm) | 0.35(Max) |
| Seated Plane Height (mm) | 0.4(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 8V |
| Maximum Continuous Drain Current | 1.78A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 43@25VpF |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
| Cage Code | 55464 |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
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