Central Semiconductor
CMPD2005SG TR PBFREE
CMPD2005SG High Voltage Silicon Switching Diode Dual In Series 350V 200mA SOT-23
The CENTRAL SEMICONDUCTOR CMPD2005SG contains two High Voltage Silicon Switching Diodes manufactured by the epitaxial planar process. The device is epoxy molded in a SOT-23 surface mount package and is designed for applications requiring high voltage capability. The SG suffix indicates that the device is halogen-free.
Temp Range-65 to +150°C
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Technical Specifications
Central Semiconductor CMPD2005SG TR PBFREE technical specifications.
General
| Peak Repetitive Reverse Voltage (Vrrm) | 350V |
| Continuous Reverse Voltage (Vr) | 300V |
| Continuous Forward Current (If) | 225mA |
| Average Rectified Forward Current (Io) | 200mA |
| Forward Voltage (Vf) Max | 1.25V |
| Reverse Current (Ir) Max | 100nA |
| Reverse Recovery Time (trr) | 50ns |
| Power Dissipation (Pd) | 350mW |
| Operating Temperature Range | -65 to +150°C |
| Diode Configuration | Dual In Series |
Compliance
| RoHS | Compliant |
| Halogen Free | Halogen Free by design (G suffix) |
| Lead Free | PBFREE |
Datasheet
Central Semiconductor CMPD2005SG TR PBFREE Datasheet
Download the complete datasheet for Central Semiconductor CMPD2005SG TR PBFREE to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.