Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 2 X 1 MM, LEADLESS, CASE TLM621, 6 PIN
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| Continuous Drain Current (ID) | 280mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.5R |
| Gate to Source Voltage (Vgs) | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| RoHS Compliant | No |
| RoHS | Not Compliant |
