Power Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,
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Central Semiconductor CZT5551TR technical specifications.
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| RoHS | Not Compliant |
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